Film formation of semiconducting nanoparticles


Nowadays all microprocessor chips in electronic products are still built on crystalline silicon wafers. Nevertheless, the costs for fabricating electronic components by conventional methods are relatively high. The development of printing technologies using semi-conducting nanoparticles promises a significant reduction of the production costs. In the case of applying polymers as the substrate material, this approach additionally enables new applications in the field of flexible electronics, because the advantages of the flexible production of polymers are combined with the advantages of inorganic semiconducting materials. Potential applications range from integrated circuits for consumer products and radio frequency tags to flexible, transparent coatings for displays. For the realization of printable electronics dispersions of semiconducting nanoparticles applicable for a printing process are required. Zum einen müssen diese Dispersionen stabile Eigenschaften gegen Sedimentation aufweisen und zum anderen müssen sie geeignet sein um hinreichende Schichten für elektronische Bauelemente herstellen zu können. The main topic of this work is the development and characterization of nearly defect free semiconducting films. Thereafter silicon, zinc oxide, and indium tin oxide nanoparticles are dispersed by various methods in aqueous and non-aqueous media. Further nanoparticles from the liquid phase are used to process thin films with different methods. During the film formation interface and structural meso- or macro defects are generated. These defects can influence the performance of devices intensely. The obtained results and the processs know-how are directly implemented to the research training group "Disperse Systems in Electronics" (GRK 1161/1). Therefor it is possible to develop together with the other groups of the training group a process chain from the particle to the device.



Fig. 1: HRTEM image of semiconducting nanoparticles.


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